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- W2055953934 abstract "To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5 μm width, 1.2 μm height, and 0.8 μm spacing were formed on sapphire substrate by dry etching using BCl3/Cl2 gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350 mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9% higher light output power than the conventional LEDs." @default.
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- W2055953934 date "2012-10-01" @default.
- W2055953934 modified "2023-09-22" @default.
- W2055953934 title "Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO" @default.
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- W2055953934 doi "https://doi.org/10.1016/j.optlastec.2012.02.008" @default.
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