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- W2056048496 abstract "Abstract We give an overview of the results obtained from joint experimental and theoretical studies of H in Si-rich (Si:Ge) and Ge-rich (Ge:Si) SiGe. Si:Ge and Ge:Si implanted at low temperatures with H + and/or D + have been studied by in situ infrared absorption spectroscopy. The states of isolated H and H dimers in dilute SiGe have also been investigated by ab initio theory. Four configurations of positively charged bond-centered H ( H BC + ) have been identified both in Si:Ge and in Ge:Si. Interestingly, the infrared spectrum arising from H BC + centers in Ge:Si is a mirror image of that observed for Si:Ge, which is a direct result of the opposite sign of the strain field induced by Si–Ge bonds on the lattice of Si:Ge and Ge:Si materials. We found that, unlike Ge in Si:Ge, the Si atoms in Ge:Si are efficient trapping sites for H, resulting in the appearance of H anti-bonded to Si at low temperatures and H dimers in the form of Ge – H BC ⋯ Si – H AB defects at room temperature." @default.
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- W2056048496 date "2006-04-01" @default.
- W2056048496 modified "2023-09-27" @default.
- W2056048496 title "Local modes of hydrogen defects in Si:Ge and Ge:Si" @default.
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- W2056048496 doi "https://doi.org/10.1016/j.physb.2005.12.008" @default.
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