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• W2056103688 endingPage "115301" @default.
• W2056103688 startingPage "115301" @default.
• W2056103688 abstract "We report here a rapid (10 s of heating) graphene growth method that can be carried out on any desired substrate, including an insulator, thus negating the need for the transfer from the metal substrate. This technique is based on metal-induced crystallization of amorphous carbon (a-C) to graphene, and involves an ultra-thin metal layer that is less than 10 nm in thickness. Rapid annealing of a bilayer of a-C and metal deposited on the surface leads to the formation of graphene film, and to subsequent breaking-up of the thin metal layer underneath the film, thus resulting in the formation of a graphene–metal hybrid film which is both transparent and electrically conducting. Based on Raman studies, we have also systematically compared ultra-thin metal-induced crystallization behavior with a case of conventional thick metal. Based on the present investigation, it was observed that the dominant growth mechanism in ultra-thin metal-induced crystallization is nucleation controlled." @default.
• W2056103688 created "2016-06-24" @default.
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• W2056103688 date "2012-03-02" @default.
• W2056103688 modified "2023-09-23" @default.
• W2056103688 title "Single-step formation of a graphene–metal hybrid transparent and electrically conductive film" @default.
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• W2056103688 doi "https://doi.org/10.1088/0957-4484/23/11/115301" @default.
• W2056103688 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/22383433" @default.
• W2056103688 hasPublicationYear "2012" @default.
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