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- W2056134001 abstract "Radiation-hardened CMOS/SIMOX (separation by implanted oxygen) devices have been developed using a combination of vertical isolation structures obtained by SIMOX technology and recently developed lateral isolation structures. The n-channel MOSFET is vertically isolated by multilayers of highly-oxygen-doped polysilicon and buried SiO2; it is laterally isolated by multilayers of thin sidewall SiO2, sidewall polysilicon, and thick field SiO2. The p-channel MOSFET has the same vertical isolation structure as that of the n-channel MOSFET, but has no sidewall polysilicon layer and uses a thick field SiO2 layer for lateral isolation. Highly-oxygen-doped polysilicon and sidewall polysilicon layers act to shield radiation-induced positive charges trapped in the buried SiO2 and field SiO2 layers, respectively." @default.
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- W2056134001 date "1987-11-01" @default.
- W2056134001 modified "2023-09-28" @default.
- W2056134001 title "Total-dose effects of gamma-ray irradiation on CMOS/SIMOX devices" @default.
- W2056134001 doi "https://doi.org/10.1109/mcd.1987.6323176" @default.
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