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- W2056198523 abstract "Abstract Plasma etching processes have been introduced to overcome some of the difficulties, such as undercutting, encountered in semiconductor fabrication processes based upon wet etching. They also give environmental advantages in that the use, and necessity for safe disposal, of corrosive etching liquids and organic solvents can be reduced or eliminated. Their use should be particularly beneficial when combined with electron, ion and X-ray lithographic techniques, for these are capable of exposing details of sub-micron dimensions, at which wet etching becomes an increasingly unreliable pattern transfer method. Dry etching media can degrade some resists very rapidly. This article reviews some of the improved materials designed specifically for use in dry etching processes. The use of dry etching in multilevel processing to obtain improved resolution in sub-micron pattern transfer, and in dry-developable resist systems is also described." @default.
- W2056198523 created "2016-06-24" @default.
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- W2056198523 date "1985-10-01" @default.
- W2056198523 modified "2023-09-26" @default.
- W2056198523 title "Resists used in plasma processing" @default.
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- W2056198523 doi "https://doi.org/10.1016/0042-207x(85)90369-0" @default.
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