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- W2056257549 endingPage "2031" @default.
- W2056257549 startingPage "2031" @default.
- W2056257549 abstract "We fabricated metal-insulator-semiconductor (MIS) junctions having the structure of a Au/polyimide (PI)/squarylium dyearachidic acid (SQ-C20) mixed system by the Langmuir-Blodgett (LB) technique, and then examined the electrical properties of the junctions. It was found that a PI LB film becomes a good electrical insulator even when the number of deposited layers is 5. From the capacitance-voltage ( C - V ) measurement, it was found that a (SQ-C20) multilayered film is depleted at the interface between the PI layer and the (SQ-C20) layer even when biasing voltage was zero millivolt because positive excess charges are displaced from the gate-Au electrode to the PI layer as deposited. The polyimide layer incorporated in the junctions makes a significant contribution to the electrical conduction, and asymmetric current-voltage ( I - V ) characteristics were obtained for the junctions." @default.
- W2056257549 created "2016-06-24" @default.
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- W2056257549 date "1990-10-01" @default.
- W2056257549 modified "2023-10-16" @default.
- W2056257549 title "Electrical Properties of Au/Polyimide/Squarylium-Arachidic Acid Junctions Fabricated by the Langmuir-Blodgett Technique" @default.
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- W2056257549 doi "https://doi.org/10.1143/jjap.29.2031" @default.
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