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- W2056304872 abstract "Investigations have been made of the thermal conductivity of alloys of the quasi-binary system Cu2–GeTe in the germanium telluride concentration range from 0 to 10 mol% and over a temperature range from 300 to 1000 °K. It is shown that all the alloys investigated are degenerate semiconductors. However, the degeneracy is partly removed by increasing the temperature above 600 °K which may be accounted for by the nonparabolicity of the valence band. The concentration dependene of phonon thermal conductivity has a minimum at 7 mol% germanium telluride. At temperatures above 500 °K significant additional thermal conductivity has been observed in all the alloys caused by bipolar diffusion of the carriers from the heavy-hole subband to the conduction band. Im Temperaturbereich zwischen 300 und 1000 °K wurden Untersuchungen der thermischen Leitfähigkeit von Legierungen des quasibinären Systems CU2Te–GeTe im Konzentrationsbereich des Germaniumtellurid von 0 bis 10 Mol% durchgeiührt. Es wird gezeigt, daß alle unteruchten Legierungen entartete Halbleiter sind, jedoch wird die Entartung durch Steigerung der Tempertur über 600 °K teilweise aufgehoben, was durch die Nichtparabolizität des Valenzbandes verursacht sein kann. Die Konzentrationsabhängigkeit der thermischen Phononenleitfähigkeit besitzt bei 7 Mol% Germaniumtellurid ein Minimum. Bei Temperaturen oberhalb 500 °K wird eine bedeutende zusätzliche thermische Leitfähigkeit bei allen Legierungen beobachtet, die durch bipolare Diffusion der Ladungsträger von dem Subband der schweren Löcher zum Leitungsband verursacht wird." @default.
- W2056304872 created "2016-06-24" @default.
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- W2056304872 date "1971-08-16" @default.
- W2056304872 modified "2023-09-23" @default.
- W2056304872 title "Thermal conductivity of copper telluride enriched alloys of the Cu2Te–GeTe system" @default.
- W2056304872 cites W2057246189 @default.
- W2056304872 doi "https://doi.org/10.1002/pssa.2210060210" @default.
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