Matches in SemOpenAlex for { <https://semopenalex.org/work/W2056306510> ?p ?o ?g. }
- W2056306510 abstract "Ultraviolet (UV) lasers are of paramount importance for applications in water purification, diagnosis and bio-agentdetection. Here we report that, with the use of dislocation-free AlGaN nanowires formed directly on Si substrate,electrically injected UV emission in the wavelength range from 319 nm to 335 nm can be readily achieved, which is theshortest wavelength range ever reported for electrically injected semiconductor lasers. In this work, catalyst-free AlGaNnanowire arrays are grown directly on Si substrate by radio frequency plasma-assisted molecular beam epitaxy (MBE).Our detailed calculation shows that such vertically aligned randomly distributed sub-wavelength scale nanowire arraycan sustain random lasing action. Various lasing peaks from 319 nm to 335 nm can be measured from such AlGaNnanowire samples under electrical injection. The threshold is measured to be in the range of tens of A/cm2 at cryogenictemperature, which is significantly smaller than the commonly reported GaN-based quantum well lasers. The measuredlinewidth is as narrow as 0.2 nm." @default.
- W2056306510 created "2016-06-24" @default.
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- W2056306510 date "2015-03-13" @default.
- W2056306510 modified "2023-09-26" @default.
- W2056306510 title "Ultralow threshold electrically injected AlGaN nanowire ultraviolet lasers on Si" @default.
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- W2056306510 doi "https://doi.org/10.1117/12.2080116" @default.
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