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- W2056370764 abstract "Abstract The challenges for thin film epitaxial techniques for the realisation of HBT device structures are: providing a high contrast between selective epitaxial growth (SEG) and non-selective epitaxial growth (NSEG) on patterned substrates; and fine control of the Ge concentration profile in the base region and the doping levels for all layers. A Gas Source MBE system has been modified for operation either in the conventional GSMBE mode or an Ultra Low Pressure CVD mode, namely the ‘by-pass mode’. This allows use of two growth modes to achieve the specified device structures. In particular, it has been demonstrated that a high As doping level (1.1×1018 cm−3) at a relatively low growth temperature and a rapid conversion to the non-selective mode, can be obtained using the by-pass mode. Non-graded and graded HBT test structures have been grown and characterised by SIMS and X-ray diffraction in order to calibrate the doping levels, the Ge concentration in the base region and the thickness of the layers." @default.
- W2056370764 created "2016-06-24" @default.
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- W2056370764 date "2000-12-01" @default.
- W2056370764 modified "2023-09-25" @default.
- W2056370764 title "Selective and non-selective growth by GSMBE/ULPCVD for heterojunction bipolar transistors" @default.
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- W2056370764 doi "https://doi.org/10.1016/s0040-6090(00)01483-8" @default.
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