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• W2056402802 abstract "We investigated total interface trap generation in epitaxial and nonepitaxial n-type 6H–SiC metal-oxide-semiconductor (MOS) capacitors by the photo-capacitance–voltage method (Jenq technique) for doses of low energy X-rays up to 20 Mrad (Si). Interface trap generation is low for both epitaxial and nonepitaxial SiC MOS capacitors and they show considerable radiation hardness, even without being specially processed to be radiation-hard. Characteristic features of the photo-capacitance–voltage curves and trapped charge are briefly discussed." @default.
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• W2056402802 date "2001-04-01" @default.
• W2056402802 modified "2023-09-27" @default.
• W2056402802 title "X-Ray Radiation Response of Epitaxial and Nonepitaxial n-6H–SiC Metal-Oxide-Semiconductor Capacitors" @default.
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• W2056402802 doi "https://doi.org/10.1143/jjap.40.2987" @default.
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