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- W2056520418 abstract "To study the interface resistivity of bonded Si wafers, every combination of three kinds of Si wafers (1.86×10 -2 , 1.91×10 -1 , and 2.44 Ω cm in resistivity) was bonded by surface activation bonding. Thermal treatments up to 1100 °C were performed and the resistivities of bonded Si wafers were measured by a four-probe method. The interface resistivities were estimated with calculations based on a model of the composite resistivity of bonded Si wafers." @default.
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- W2056520418 date "2006-10-01" @default.
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- W2056520418 title "Interface Resistivity of Directly Bonded Si Wafers" @default.
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- W2056520418 doi "https://doi.org/10.1143/jjap.45.7938" @default.
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