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- W2056521156 abstract "Organic field-effect transistors using pentacene have been fabricated employing polyimide gate dielectric layers. The root-mean square surface roughness of polyimide films is 9 A. Devices with thin polyimide films as gate achieved a mobility of 0.16 cm2 V−1 s−1, threshold voltage −6.4 V, on–off ratio ~ 104 and subthreshold slope 7.5 dec−1 with the gate voltage span between 0 and −30 V. The upper limit of interface trap density has been estimated to be 3.9 × 1012 cm−2 eV−1. The mobility is found to be gate bias dependent." @default.
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- W2056521156 date "2005-04-02" @default.
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- W2056521156 title "Improved performance of pentacene field-effect transistors using a polyimide gate dielectric layer" @default.
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- W2056521156 doi "https://doi.org/10.1088/0022-3727/38/8/008" @default.
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