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• W2056529003 abstract "Unbonded areas or bubbles generated at the interface of bonded silicon wafers in the temperature range of 200-800°C have been investigated. Experiments described in this paper demonstrate that the desorption of hydrocarbon contamination at the silicon wafer surfaces appears to be a necessary condition for the formation of these bubbles. SIMS data also indicate the existence of hydrocarbons at the bonding interface. It is speculated that hydrocarbon gas such as CH 4 is required for bubble nucleation and that either CH 4 or H 2 itself or a mixture of both gases is contained in these bubbles. Finally, methods to prevent the formation of these bubbles are presented." @default.
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• W2056529003 date "1991-04-01" @default.
• W2056529003 modified "2023-10-18" @default.
• W2056529003 title "Causes and Prevention of Temperature-Dependent Bubbles in Silicon Wafer Bonding" @default.
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• W2056529003 doi "https://doi.org/10.1143/jjap.30.615" @default.
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