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- W2056533520 abstract "This chapter focuses on scientific aspects of etching, and demonstrates that etching is technologically significant. Rapid metal (or semiconductor) etching involving loss of material is encountered in several areas of technology and science. Similar mechanisms account successfully for these processes. Vapor phase free radicals interact with the solid surface to form surface complexes that are subsequently volatilized. This process leads to net loss of material from the solid and often to gross surface reconstruction as well. There are subtle, but important, differences among the etching processes. In the case of catalytic etching, the surface species formed by free-radical/metal interactions spontaneously volatilize. In contrast, in plasma etching, high-energy charged species often play a synergistic role. In some cases they provide the energy required for volatilization. In other cases they provide the energy required for reactions between free radicals and surface atoms, and the surface complexes thus formed volatilize spontaneously." @default.
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- W2056533520 date "1977-02-01" @default.
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- W2056533520 title "A case of interference between catalytic action and surface rearrangement" @default.
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- W2056533520 doi "https://doi.org/10.1016/0021-9517(77)90202-0" @default.
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