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- W2056535521 abstract "Red-emitting AlGaInP quantum well lasers are now a well-established commercial product with a range of applications, many in high-volume, low-cost market sectors. Although the operation of these devices is generally understood, there are a number of critical aspects of the device structure, determined by the crystal growth process, which have an influence on key performance characteristics. A number of these are considered in this paper, particularly strain limits and non-planar growth, the effect of interface roughness on optimisation of the well width for minimum threshold current, and the influence of the doping density of the p-cladding layer on the temperature sensitivity of threshold current. These factors are examined in terms of the mechanisms by which they affect the operation of the device." @default.
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- W2056535521 date "1999-12-01" @default.
- W2056535521 modified "2023-09-23" @default.
- W2056535521 title "Material issues in AlGaInP red-emitting laser diodes" @default.
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- W2056535521 doi "https://doi.org/10.1016/s0921-5107(99)00103-8" @default.
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