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• W2056541279 abstract "The fabrication of low-voltage flexible organic thin film transistors using zirconia (ZrO2) dielectric layers prepared via supercritical fluid deposition was studied. Continuous, single-phase films of approximately 30 nm thick ZrO2 were grown on polyimide (PI)/aluminum (Al) substrates at 250 °C via hydrolysis of tetrakis(2,2,6,6-tetramethyl-3,5-heptane-dionato) zirconium in supercritical carbon dioxide. This dielectric layer showed a high areal capacitance of 317 nF cm–2 at 1 kHz and a low leakage current of 1.8 × 10–6 A cm–2 at an applied voltage of −3 V. By using poly(3-hexylthiophene) (P3HT) as a semiconductor, we have fabricated flexible thin film transistors operating at VDS = −0.5 V and VG in a range from 0.5 V to −4 V, with on/off ratios on the order of 1 × 103 and mobility values higher than 0.1 cm2/(V s)." @default.
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• W2056541279 date "2012-05-01" @default.
• W2056541279 modified "2023-09-27" @default.
• W2056541279 title "Flexible Low-Voltage Polymer Thin-Film Transistors Using Supercritical CO₂-Deposited ZrO₂ Dielectrics" @default.
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• W2056541279 doi "https://doi.org/10.1021/am300371d" @default.
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