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- W2056551701 abstract "A structure consisting of a nanoporous dielectric film (SiO2) containing alternated layers of metal (Cu/Ni) in the pores on a n-type semiconductor substrate has been formed using the swift heavy ion track technology. Investigations of electrical and galvanomagnetic characteristics of this structure have made it possible to determine conduction mechanisms dominating in different temperature regions. A positive magnetoresistance reaching 30% and 1000%, respectively, was detected in temperature ranges of 175–300 K and lower than 50 K. Si/SiO2(Cu/Ni) structures could be employed as novel sensitive elements for magnetic field sensors." @default.
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- W2056551701 date "2014-09-01" @default.
- W2056551701 modified "2023-10-16" @default.
- W2056551701 title "Positive magnetoresistive effect in Si/SiO2(Cu/Ni) nanostructures" @default.
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- W2056551701 doi "https://doi.org/10.1016/j.sna.2014.04.022" @default.
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