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• W2056572873 abstract "Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>${sim}1.5times 10^{-9}~Omegacdot~{rm cm}^{2}$</tex></formula> are extracted from Ni(Pt) silicide contacts on in situ boron-doped <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>${rm Si}_{0.7}{rm Ge}_{0.3}$</tex></formula> with a chemical boron-doping density of <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$2times 10^{21}/{rm cm}^{3}$</tex></formula> . This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found." @default.
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• W2056572873 date "2013-06-01" @default.
• W2056572873 modified "2023-10-16" @default.
• W2056572873 title "Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node" @default.
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• W2056572873 doi "https://doi.org/10.1109/led.2013.2257664" @default.
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