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- W2056573472 abstract "Optical-transmission measurements at 20 and 77 K were used to deduce the magnitude and spectral dependence of the optical cross section ${ensuremath{sigma}}_{I}$ for transitions from neutral Mn acceptors to the valence bands of GaAs. The threshold energy for such transitions is ${E}_{a}=0.11$ eV, and ${ensuremath{sigma}}_{I}$ was studied from threshold to 0.7 eV. The crystals used had ${10}^{17}$ to ${10}^{18}$ ${mathrm{cm}}^{ensuremath{-}3}$ of uncompensated Mn acceptors, as determined by analysis of Hall-effect data over the 60-400-K range. The spectral dependence of ${ensuremath{sigma}}_{I}$ over the range 0.11-0.45 eV is in good agreement with Lucovsky's $ensuremath{delta}$-function potential model, as has been reported previously. Comparisons between experiment and Lucovsky's model are complicated for photon energies above 0.46 eV by transitions to the split-off band of GaAs. In contrast to previous reports, we find that the magnitude of ${ensuremath{sigma}}_{I}$ (a maximum of 8 ifmmodetimeselsetexttimesfi{} ${10}^{ensuremath{-}17}$ ${mathrm{cm}}^{2}$ at 0.22 eV) is in good agreement with Lucovsky's model for an effective-field ratio of unity. Thus we find that dielectric reinforcement of the electric vector for a photon interacting with a Mn acceptor (wave-function radius 10.1 AA{}) is negligible. A comparison of our data with quantum-defect models is less satisfactory than the $ensuremath{delta}$-function model at low energies, but becomes more favorable in the spectral region for which the split-off band is involved." @default.
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- W2056573472 date "1973-12-15" @default.
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- W2056573472 title "Photoionization Cross Section for Manganese Acceptors in Gallium Arsenide" @default.
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- W2056573472 doi "https://doi.org/10.1103/physrevb.8.5664" @default.
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