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- W2056575717 abstract "Back-gate-bias VBG dependence of threshold voltage VT and gate-bias VG dependence of “gain” term β (and effective mobility μeff) of 50-keV-boron-implanted n-channel MOS transistors are described as functions of implant dose. In low field region, e.g. forward-biased VBG, the slopes of √[−(φsub + VBG)] vs VT characteristics depend on the implant dose, while under high reverse bias, the slopes are constant and determined by the unimplanted substrate impurity concentration. Corresponding to this, the VG vs β(μeff) characteristics indicate strong dose dependence and reduction of β(μeff) in low field, while in high field the reduction of β(μeff) is observed but not so significant. The effect is clear in the case of a deeply implanted layer or in case of a large ratio of effective channel length to width, as predicted by transistor equations." @default.
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- W2056575717 date "1974-06-01" @default.
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- W2056575717 title "Electrical characteristics of boron-implanted n-channel MOS transistors" @default.
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- W2056575717 doi "https://doi.org/10.1016/0038-1101(74)90183-x" @default.
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