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- W2056580880 abstract "The conditions to grow misfit dislocation-free In1−xGaxAs1−yPy/InP (0⩽x⩽0.47, 0⩽y⩽1.0) heterostructure wafers were first determined systematically by observing etch pits and x-ray topographs. Etch pits were produced on InP substrates on which an In1−xGaxAs1−yPy layer was grown, and they were observed to find whether misfit dislocations generated or not. Threshold regions for initiation of misfit dislocations into the wafers were determined as a function of both lattice misfit and layer thickness. The misfit dislocation-free regions determined by the etch pit observation of InP was found to be equivalent to the regions where misfit dislocations form in neither InP nor In1−xGaxAs1−yPy . The misfit dislocation-free regions of the quaternary wafers are larger than the region of the ternary In1−xGaxAs/InP wafers by more than three times." @default.
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- W2056580880 date "1981-07-01" @default.
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- W2056580880 title "Misfit dislocation‐free In<sub>1−<i>x</i></sub>Ga<sub><i>x</i></sub>As<sub>1−<i>y</i></sub>P<sub><i>y</i></sub>/InP heterostructure wafers grown by liquid phase epitaxy" @default.
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- W2056580880 doi "https://doi.org/10.1063/1.329333" @default.
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