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- W2056584333 abstract "The photoluminescence images of defects in semiconductors are calculated and the factors discussed which affect the resolution. In the special case of a Schottky barrier being present on the surface of the semiconductor it is shown that the optical beam induced current resolution and the photoluminescence resolution are identical. It is further shown that by considering the ratio of the contrasts in the two cases that the depth of a point defect may be calculated. Die Photolumineszenzbilder von Defekten in Halbleitern werden berechnet und die Faktoren diskutiert, die die Auflösung beeinflussen. Für den Fall einer Schottkybarriere an der Halbleiteroberfläche wird gezeigt, daß die Auflösung des optisch induzierten Stromes und die Photolumineszenzauflösung identisch sind. Es wird weiterhin gezeigt, daß durch Berücksichtigung des Kontrasts in den beiden Fällen die Tiefe eines Punktdefekts berechnet werden kann." @default.
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- W2056584333 date "1987-09-16" @default.
- W2056584333 modified "2023-09-27" @default.
- W2056584333 title "Photoluminescence and Optical Beam Induced Current Images of Defects in Semiconductors" @default.
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- W2056584333 doi "https://doi.org/10.1002/pssa.2211030111" @default.
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