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- W2056584379 abstract "Abstract A chemical depth profile of anodic oxide on GaSb, which was grown in a H 2 O 2 solution, was investigated by using the XPS method. The constant current anodic oxidation was able to control the oxide thickness by the terminating voltage ( V t ). The thickness is represented as 2.3 V t nm in case of the constant current of 1–2 mA/cm 2 . The oxidized gallium was distributed uniformly throughout the oxide layer, while the oxide antimony concentrated at the surface. There was a small pile-up of the elemental antimony at the oxide-semiconductor interface." @default.
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- W2056584379 date "1994-09-01" @default.
- W2056584379 modified "2023-10-14" @default.
- W2056584379 title "Chemical depth profile of GaSb anodic oxide grown in H2O2 solution using XPS method" @default.
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- W2056584379 doi "https://doi.org/10.1016/0167-577x(94)90133-3" @default.
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