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- W2056585910 abstract "We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×1017 cm−3 and the Hall mobility was up to 40 cm2/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrier photodetectors with the cut-off wavelength of 278 nm." @default.
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- W2056585910 date "2001-09-17" @default.
- W2056585910 modified "2023-10-14" @default.
- W2056585910 title "Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors" @default.
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- W2056585910 doi "https://doi.org/10.1063/1.1402159" @default.
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