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• W2056587694 abstract "We demonstrate a procedure for fabricating back-gate-type sub 5 nm gap junctions without using electron beam lithography. The fabricating procedure contains two photolithographic processes followed by shadow evaporation and oxygen plasma ashing. Oligo( para -phenylenevinylene) trimers (OPV3) attached to methylthiol at both ends were bridged between these junctions. The temperature dependence of OPV3 conductance indicated the characteristic behavior of hopping conduction. The results indicate that these junctions can be used in the study of conductance measurements through molecular wires." @default.
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• W2056587694 date "2005-03-01" @default.
• W2056587694 modified "2023-09-23" @default.
• W2056587694 title "Measuring Molecular Conductivities Using Single Molecular-Sized Gap Junctions Fabricated without Using Electron Beam Lithography" @default.
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• W2056587694 doi "https://doi.org/10.1143/jjap.44.l472" @default.
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