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• W2056593232 endingPage "2328" @default.
• W2056593232 startingPage "2319" @default.
• W2056593232 abstract "Hall-effect and resistivity measurements have been made on n-type and ultrapure germanium. The n-type material was characterized by measuring the electron mobility ${ensuremath{mu}}_{L}$ as a function of temperature down to 100 K at atmospheric pressure. At high pressure, the band structure of germanium becomes similar to that of silicon at atmospheric pressure, making the ${ensuremath{Delta}}_{1C}$ minima accessible to direct electrical investigation. In this siliconlike structure, the electron mobility ${ensuremath{mu}}_{ensuremath{Delta}}$ was found to increase with temperature T from 800 ${mathrm{cm}}^{2}$ ${mathrm{V}}^{mathrm{ensuremath{-}}1}$ ${mathrm{S}}^{mathrm{ensuremath{-}}1}$ at 300 K according to ${T}^{mathrm{ensuremath{-}}2.7}$, indicating that intervalley scattering dominates as in silicon. This contrasts with electron scattering in the ${L}_{1C}$ minima which is dominated by deformation potential intravalley scattering. An analysis with the values ${m}_{t}^{mathrm{*}}$=0.288 and ${m}_{l}^{mathrm{*}}$=1.353 gave intervalley coupling constants of 3.7ifmmodetimeselsetexttimesfi{}${10}^{8}$ and 2.9ifmmodetimeselsetexttimesfi{}${10}^{8}$ eV ${mathrm{cm}}^{mathrm{ensuremath{-}}1}$ for the 430-K (LO) and 320-K (LA) phonons, respectively. Having established ${ensuremath{mu}}_{L}$ and ${ensuremath{mu}}_{ensuremath{Delta}}$, the resistivity ensuremath{rho} was measured as a function of pressure in ultrapure material at 300 K. It was found to increase exponentially below 25 kbar where the material was n type corresponding to ${mathrm{dE}}_{L}$/dP=(4.8ifmmodepmelsetextpmfi{}0.2)ifmmodetimeselsetexttimesfi{}${10}^{mathrm{ensuremath{-}}6}$ eV ${mathrm{bar}}^{mathrm{ensuremath{-}}1}$. A p- to n-type transition was observed and beyond 35 kbar, where the material was p type, the resistivity decreased exponentially corresponding to ${mathrm{dE}}_{ensuremath{Delta}}$/dP=-(2.4ifmmodepmelsetextpmfi{}0.4)ifmmodetimeselsetexttimesfi{}${10}^{mathrm{ensuremath{-}}6}$ eV ${mathrm{bar}}^{mathrm{ensuremath{-}}1}$. With the effective-mass values given above, best overall fit was obtained with ensuremath{Delta}${E}_{L?(mathrm{hy}ensuremath{Delta}}$=0.21ifmmodepmelsetextpmfi{}0.01 eV at atmospheric pressure." @default.
• W2056593232 created "2016-06-24" @default.
• W2056593232 creator A5029281435 @default.
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• W2056593232 date "1986-08-15" @default.
• W2056593232 modified "2023-09-23" @default.
• W2056593232 title "Electron transport and pressure coefficients associated with the<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi>L</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>C</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>and<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi>Δ</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>C</mml:mi></mml:mrow></mml:msub></mml:…" @default.
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• W2056593232 doi "https://doi.org/10.1103/physrevb.34.2319" @default.
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