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- W2056679357 abstract "Ultralow on-resistance silicon carbide static induction transistors with buried gate structures (SiC-BGSITs) have been successfully developed through innovative fabrication process. A submicrometer buried p <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> gate structure was fabricated by the combination of submicrometer trench dry etching and epitaxial growth on a trench structure. The breakdown voltage V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>BR</sub> and specific on-resistance R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>onS</sub> of the fabricated SiC-BGSIT were 700 V at a gate voltage V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> =-12V, and 1.0 mOmegamiddotcm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> at a current density J <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> =200A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> and V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> =2.5V, respectively. This R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>onS</sub> is the lowest on-resistance for ~600 V class power switching devices, including other SiC devices and GaN HEMTs" @default.
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- W2056679357 date "2006-11-01" @default.
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- W2056679357 title "700-V 1.0-$hboxmOmega cdot hboxcm^2$Buried Gate SiC-SIT (SiC-BGSIT)" @default.
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- W2056679357 doi "https://doi.org/10.1109/led.2006.884724" @default.
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