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• W2056721972 abstract "A new amorphous semiconductor alloy system ${mathrm{Si}}_{x}{mathrm{C}}_{x}{mathrm{F}}_{y}$ has been prepared by rf sputtering of polycrystalline SiC in an Ar+Si${mathrm{F}}_{4}$ atmosphere. Dark conductivity and optical absorption of thin films are measured as functions of F concentration. Infrared spectra indicate a preferential attachment of fluorine to carbon over silicon. The bonded fluorine concentration is estimated to be as high as 40 at.%. The principal reststrahlen band shifts to higher frequencies and appears to sharpen with the increase of fluorine concentration. Fluorinated films are observed to be resistant to high-temperature annealing." @default.
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• W2056721972 date "1983-04-15" @default.
• W2056721972 modified "2023-10-16" @default.
• W2056721972 title "Amorphous silicon-carbon-fluorine alloy films" @default.
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• W2056721972 doi "https://doi.org/10.1103/physrevb.27.5032" @default.
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