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• W2056765497 abstract "Electronic information storage has become one of the major needs of modern societies, and it represents a market of more than US$5 billion [1]. Among all of the existing technologies, flash memory is the most widespread because of its simple structure, high integration, and fast speed [2]. The core cell of this device is based on the charge and discharge of a capacitor using a transistor as a tiny switch [3], but, as the devices are scaled down, this configuration presents some physical limitations [4]. Therefore, new ways for information storage are required, and, among all existing nonvolatile memories, one that has raised major expectations in recent years is resistive random access memory (RRAM) [5]. In this article, we present the working principle and functioning of the most promising RRAM devices for future information storage." @default.
• W2056765497 created "2016-06-24" @default.
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• W2056765497 date "2015-03-01" @default.
• W2056765497 modified "2023-10-06" @default.
• W2056765497 title "A Future Way of Storing Information: Resistive Random Access Memory" @default.
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• W2056765497 doi "https://doi.org/10.1109/mnano.2014.2373402" @default.
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