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- W2056799106 abstract "Epitaxial hexagonal GdSi≊1.7 was grown by in situ vacuum annealing of 50 and 250 nm Gd layers on 〈111〉 silicon. The epitaxy was investigated by x-ray and electron diffraction measurements." @default.
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- W2056799106 date "1991-01-21" @default.
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- W2056799106 title "Epitaxy of GdSi≊1.7 on 〈111〉Si by solid phase reaction" @default.
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- W2056799106 doi "https://doi.org/10.1063/1.104704" @default.
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