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- W2056799688 abstract "An examination is made of the electrical and photovoltaic characteristics of SnO2-InP heterojunctions which were fabricated by chemical vapor deposition of SnO2 onto the surface of epitaxial layers of n-type InP. The dark current and capacitance of these devices were measured as a function of voltage at several temperatures and analyzed in terms of existing theories, considering the presence of an interfacial oxide layer. The devices exhibited ideality factors of 1.40 and saturation current densities of ∼10−5 A cm−2 at room temperature. The dark currents in the devices were found to be mainly dominated by tunneling of carriers via interface states. The analysis of the electrical characteristics yielded a thickness of the interfacial layer between 19 and 36 Å. Under AM1 illumination, the devices exhibited photovoltaic effect with an open-circuit voltage of 265 mV, short-circuit current of 19.10 mA cm−2, and a fill factor of 0.56." @default.
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- W2056799688 date "1980-03-01" @default.
- W2056799688 modified "2023-09-26" @default.
- W2056799688 title "Electronic processes in SnO2- (<i>n</i>-type) InP heterojunctions" @default.
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- W2056799688 doi "https://doi.org/10.1063/1.327770" @default.
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