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- W2057010072 abstract "Effect of plasma enhanced chemical vapor deposition W-N diffusion barrier on characteristics of Cu based multilevel interconnect with fluorine doped silicon oxide (SiOF) was investigated. AFM results show that surface roughness of Cu film on the SiOF/Si increases 7.27 angstrom to 78.82 angstrom, whereas that of the Cu on the W-N/SiOF/Si, exhibiting smoother surface, increases from 12.49 to 45.31 angstrom after annealing at 500 degrees C for 30 min. Also, the resistivity of Cu/W-N/SiOF/Si system is lower than that of Cu/SiOF/Si after post-annealing. The stress evolution during the annealing at 200-500 degrees C reveals that the Cu and SIOF films have tensile stresses and the W-N film has low compressive stress. Therefore, Cu/W-N/SiOF/Si interconnect has lower tensile than that of Cu/SiOF/Si due to the low compressive stress of the W-N. C-V measurements show that in the Cu/SiOF/Si capacitor the threshold voltage shifts to -0.5 V after annealing at 500 degree C for 30 min. These results mean that the Cu atoms are diffused into the SiOF after post annealing and these Cu atoms act as positive ions in the SiOF. However, in the Cu/W-N/SiOF/Si the W-N prevents the diffusion of Cu atoms into the SiOF and the out diffusion of F from the SiOF." @default.
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- W2057010072 date "1999-04-27" @default.
- W2057010072 modified "2023-09-23" @default.
- W2057010072 title "Effects of PECVD W-N diffusion barrier on thermal stress and electrical properties of Cu/W-N/SiOF multilevel interconnect" @default.
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- W2057010072 doi "https://doi.org/10.1117/12.346918" @default.
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