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- W2057079006 abstract "We have investigated the oxidation of Cr(110) at 330°C and high oxygen exposures by surface sensitive X-ray scattering. Single crystal Cr(110) films prepared by molecular beam epitaxy (MBE) were used. Via in-situ X-ray reflectivity measurements the exact oxide thickness could be determined. New information about the metal/oxide interface was obtained: the oxidation is proceeding without roughening of the interface and the Cr(110) layers are oxidized in a layer-by-layer fashion. The number of Cr(110) planes can be counted before and after oxidation from in-situ Laue oscillation measurements of the Cr(110) Bragg peak. This reveals detailed information about the material consumption by the oxidation process. Additional ex-situ in-plane Bragg scans under grazing incidence show that an epitaxial, orthorhombic Cr2O3 layer in (0001) orientation is formed. The in-plane structure of the oxide layer can be improved by annealing in ultra-high vacuum." @default.
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- W2057079006 date "1995-04-01" @default.
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- W2057079006 title "Epitaxial oxide formation on Cr(110) films" @default.
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- W2057079006 doi "https://doi.org/10.1016/0039-6028(94)00830-2" @default.
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