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• W2057165304 abstract "An improved pulsed rapid thermal annealing (PRTA) has been used for the solid-phase crystallization (SPC) of a-Si films prepared by PECVD. The SPC can be completed with time-temperature budgets such as 10 cycles of 60-s 550°C thermal bias/1-s 850°C thermal pulse. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD). The results indicate that this PRTA is a suitable post-crystallization technique for fabricating large-area poly-Si films on low-cost substrate." @default.
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• W2057165304 date "2000-04-01" @default.
• W2057165304 modified "2023-09-25" @default.
• W2057165304 title "Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing" @default.
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• W2057165304 doi "https://doi.org/10.1016/s0927-0248(99)00145-2" @default.
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