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- W2057186786 abstract "The surface properties of semiconductors can be measured by placing the sample in proximity to a surface acoustic wave delay line and applying a pulsed rf signal to the input. There will be time-dependent changes in the attenuation constant of the delay line, in the acoustoelectric voltage, and changes in the convolution voltage (if the device is a convolver) all due to the varying surface properties of the semiconductor. Further information can be obtained by subjecting the semiconductor to a pulsed dc electric field, or a second large pulsed rf field, and also by exposing the semiconductor to different wavelengths of light and repeating the above experiments. Some of the specific properties which have been determined are: (a) the location of the surface states in the energy band of epitaxial GaAs and CdS, (b) variation of the surface conductivity as a function of surface potential in Si, (c) type of surface carriers and their variation due to illumination, and (d) lifetimes associated with the emission and absorption of carriers in the surface traps. There is no physical contact with the semiconductor surface and the method is simple and sensitive." @default.
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- W2057186786 date "1976-07-01" @default.
- W2057186786 modified "2023-10-16" @default.
- W2057186786 title "Determination of electrical surface properties of Si, GaAs, and CdS using acoustic surface wave" @default.
- W2057186786 doi "https://doi.org/10.1116/1.569027" @default.
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