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- W2057236827 abstract "Deep etching of n-type 6H-SiC using a two-step etching process has been studied. First, anodization of 6H-SiC in an HF electrolyte (2 wt.%) without ultraviolet light is applied to form a deep porous layer with the desired dimensions. Then, a thermal oxidation process is used to oxidize this porous layer. The oxidized layer is then removed in a concentrated HF solution. In the experiments, the etching parameters electrolyte concentration and current density are optimized in order to obtain a uniform pore size and hence, a smooth etched surface. After adjusting these parameters, the porous layer formation experiments are carried out at 20/spl deg/C in a 2 wt.% HF electrolyte using a current density of 50 mA/cm/sup 2/. The corresponding porous layer formation rate is about 1.1 /spl mu/m/min. To demonstrate the capabilities of this SiC bulk micromachining process, deep circular cavities are fabricated in n-type 6H-SiC substrates." @default.
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- W2057236827 date "2006-06-01" @default.
- W2057236827 modified "2023-10-01" @default.
- W2057236827 title "Electrochemical Etching of n-Type 6H-SiC Without UV Illumination" @default.
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- W2057236827 doi "https://doi.org/10.1109/jmems.2006.872225" @default.
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