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- W2057272559 abstract "The GaP-based dilute nitride Ga(NAsP) reveals a direct band gap and first laser device operation based on GaP substrate have been demonstrated recently. Since the lattice mismatch between GaP and Si is very small and the defect free deposition of thick GaP/Ga(NP) sequences on off-oriented Si substrate have been reported in literature, the epitaxial transfer of this novel direct band gap material Ga(NAsP) on Si substrate should allow for the monolithic integration of laser diodes on Si microprocessors. The present study introduces a nucleation scheme of GaP on exact oriented (001) Si substrate by metal organic vapour phase epitaxy (MOVPE) to achieve this goal. Appling an optimized annealing procedure to (001) Si substrates with a slight off-orientation towards (see manuscript) direction leads to a Si surface, where step-doubling has set in and bi-atomic terraces are formed. Even though mono-atomic terraces are still present in low density, an optimized GaP nucleation procedure ensures self-annihilation of all present antiphase domains (APDs) and reveals an antiphase disorder free III/V film on Si after the deposition of about 50nm of GaP. This ideal nucleation layer together with a precise strain-management allows for the deposition of Ga(NAsP)/(BGa)(AsP) multi-quantum-well (MQW) heterostructures embedded in 1μm thick (BGa)P layers on Si substrate. Structural investigations using X-ray diffraction (XRD) and transmission electron microscopy (TEM) prove a high crystal quality and abrupt heterointerfaces. This monolithic integration concept of the GaP-based laser material on exact oriented (001) Si substrates enables the integration of optoelectronic devices into the standard CMOS process." @default.
- W2057272559 created "2016-06-24" @default.
- W2057272559 creator A5029485379 @default.
- W2057272559 creator A5044807604 @default.
- W2057272559 creator A5056097202 @default.
- W2057272559 creator A5065191924 @default.
- W2057272559 creator A5078068590 @default.
- W2057272559 creator A5078372181 @default.
- W2057272559 creator A5089722304 @default.
- W2057272559 date "2008-02-07" @default.
- W2057272559 modified "2023-09-27" @default.
- W2057272559 title "Monolithic growth of the direct band gap material Ga(NAsP) lattice matched on (001) silicon substrate" @default.
- W2057272559 cites W2037653519 @default.
- W2057272559 doi "https://doi.org/10.1117/12.763249" @default.
- W2057272559 hasPublicationYear "2008" @default.
- W2057272559 type Work @default.
- W2057272559 sameAs 2057272559 @default.
- W2057272559 citedByCount "0" @default.
- W2057272559 crossrefType "proceedings-article" @default.
- W2057272559 hasAuthorship W2057272559A5029485379 @default.
- W2057272559 hasAuthorship W2057272559A5044807604 @default.
- W2057272559 hasAuthorship W2057272559A5056097202 @default.
- W2057272559 hasAuthorship W2057272559A5065191924 @default.
- W2057272559 hasAuthorship W2057272559A5078068590 @default.
- W2057272559 hasAuthorship W2057272559A5078372181 @default.
- W2057272559 hasAuthorship W2057272559A5089722304 @default.
- W2057272559 hasConcept C110738630 @default.
- W2057272559 hasConcept C111368507 @default.
- W2057272559 hasConcept C127313418 @default.
- W2057272559 hasConcept C171250308 @default.
- W2057272559 hasConcept C175665537 @default.
- W2057272559 hasConcept C178790620 @default.
- W2057272559 hasConcept C181966813 @default.
- W2057272559 hasConcept C185592680 @default.
- W2057272559 hasConcept C192562407 @default.
- W2057272559 hasConcept C2777289219 @default.
- W2057272559 hasConcept C2779227376 @default.
- W2057272559 hasConcept C49040817 @default.
- W2057272559 hasConcept C544956773 @default.
- W2057272559 hasConcept C61048295 @default.
- W2057272559 hasConcept C79794668 @default.
- W2057272559 hasConceptScore W2057272559C110738630 @default.
- W2057272559 hasConceptScore W2057272559C111368507 @default.
- W2057272559 hasConceptScore W2057272559C127313418 @default.
- W2057272559 hasConceptScore W2057272559C171250308 @default.
- W2057272559 hasConceptScore W2057272559C175665537 @default.
- W2057272559 hasConceptScore W2057272559C178790620 @default.
- W2057272559 hasConceptScore W2057272559C181966813 @default.
- W2057272559 hasConceptScore W2057272559C185592680 @default.
- W2057272559 hasConceptScore W2057272559C192562407 @default.
- W2057272559 hasConceptScore W2057272559C2777289219 @default.
- W2057272559 hasConceptScore W2057272559C2779227376 @default.
- W2057272559 hasConceptScore W2057272559C49040817 @default.
- W2057272559 hasConceptScore W2057272559C544956773 @default.
- W2057272559 hasConceptScore W2057272559C61048295 @default.
- W2057272559 hasConceptScore W2057272559C79794668 @default.
- W2057272559 hasLocation W20572725591 @default.
- W2057272559 hasOpenAccess W2057272559 @default.
- W2057272559 hasPrimaryLocation W20572725591 @default.
- W2057272559 hasRelatedWork W1504272055 @default.
- W2057272559 hasRelatedWork W1666729138 @default.
- W2057272559 hasRelatedWork W1667218544 @default.
- W2057272559 hasRelatedWork W1972495690 @default.
- W2057272559 hasRelatedWork W1983761642 @default.
- W2057272559 hasRelatedWork W2047683715 @default.
- W2057272559 hasRelatedWork W2050890922 @default.
- W2057272559 hasRelatedWork W248139524 @default.
- W2057272559 hasRelatedWork W2952550260 @default.
- W2057272559 hasRelatedWork W3145649460 @default.
- W2057272559 isParatext "false" @default.
- W2057272559 isRetracted "false" @default.
- W2057272559 magId "2057272559" @default.
- W2057272559 workType "article" @default.