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• W2057305800 abstract "Comparison of depth ionization distributions from a silicon semiconductor detector and depth dose curves from a plane parallel ionization chamber show that a semiconductor detector of p-type is well suited for relative electron dosimetry in the energy range of 6 to 20 MeV in Ep,0. Maximum deviations of the order of 1.5 per cent and of mm were obtained down to a phantom depth of about 1 mm. The directional dependence of the detector was about 4 per cent." @default.
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• W2057305800 date "1985-01-01" @default.
• W2057305800 modified "2023-10-10" @default.
• W2057305800 title "Characteristics of a P-Si Detector in High Energy Electron Fields" @default.
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• W2057305800 doi "https://doi.org/10.3109/02841868509134368" @default.
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