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• W2057335083 abstract "Undoped and boron-doped multiple quantum well heterostructures composed of Si1 − xGex have been grown on Si(110) and Si(111) substrates. Photoluminescence (PL), secondary ion mass spectrometry (SIMS), transmission electron microscopy, and X-ray diffraction have been used to characterize the structures. The structures with the highest quality, as defined by quantum confined PL, were grown at 710°C, however SIMS revealed that substantial boron migration out of the wells occurred at this growth temperature." @default.
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• W2057335083 date "1995-12-01" @default.
• W2057335083 modified "2023-10-16" @default.
• W2057335083 title "The growth and characterization of Si1 − xGex multiple quantum wells on Si(110) and Si(111)" @default.
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• W2057335083 doi "https://doi.org/10.1016/0022-0248(95)00368-1" @default.
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