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• W2057383902 abstract "This paper reports on an effective chemical etching treatment to remove a boron-rich layer which has a significant negative impact on n-type silicon (Si) solar cells with boron emitter. A nitric acid-grown oxide/silicon nitride stack passivation on the boron-rich layer-etched boron emitter markedly decreases the emitter saturation current density J0e from 430 to 100 fA/cm2. This led to 1.6% increase in absolute cell efficiency including 22 mV increase in open-circuit voltage Voc and 1.9 mA/cm2 increase in short-circuit current density Jsc. This resulted in screen-printed large area (239 cm2) n-type Si solar cells with efficiency of 19.0%." @default.
• W2057383902 created "2016-06-24" @default.
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• W2057383902 date "2012-08-13" @default.
• W2057383902 modified "2023-10-18" @default.
• W2057383902 title "Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells" @default.
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• W2057383902 doi "https://doi.org/10.1063/1.4746424" @default.
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