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• W2057387054 abstract "This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches." @default.
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• W2057387054 date "2012-02-13" @default.
• W2057387054 modified "2023-10-14" @default.
• W2057387054 title "High-<i>k</i> GaAs metal insulator semiconductor capacitors passivated by <i>ex-situ</i> plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning" @default.
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• W2057387054 doi "https://doi.org/10.1063/1.3687199" @default.
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