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- W2057442599 abstract "We propose ZnO as an attractive interfacial layer (IL) option for n-type metal-IL-semiconductor (MIS) contacts because of (i) good conduction band alignment between ZnO and Si/Ge/SiC, (ii) high n-type doping possible in ZnO, and, (iii) low Fermi-level pinning factor for metal/ZnO contacts. Device simulations suggest better scalability for MIS contacts versus silicides/germanides for future FinFET technologies. Contact diode measurements on Ti/n+-ZnO/n-Ge and Ti/n+-ZnO/n-Si devices show nearly 1000X increase in current densities due to the presence of an n+-ZnO IL. In comparison to alternate IL options such as Al2O3 and TiO2, n+-ZnO gives significantly higher current densities on n-Ge as demonstrated through device simulations and experimental data. Specific contact resistivity of (0.8-1.5) × 10-6 Ω cm2 is demonstrated through four-probe measurements on circular TLM devices fabricated on n+-Ge (1 × 1019 cm-3) epi layers using n+-ZnO IL." @default.
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- W2057442599 date "2012-06-01" @default.
- W2057442599 modified "2023-09-27" @default.
- W2057442599 title "ZnO: an attractive option for n-type metal-interfacial layer-semiconductor (Si, Ge, SiC) contacts" @default.
- W2057442599 doi "https://doi.org/10.1109/vlsit.2012.6242472" @default.
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