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- W2057476918 abstract "The complex index of refraction of single-crystal Si[100] bombarded with low energy hydrogen ions was measured as a function of depth into the silicon from the bombarded surface. The bombardment conditions were a 1600 eV hydrogen beam produced by a Kaufman ion source, 1.4 mA cm-2 flux, 2×1018 ions cm-2 fluence and 275°C bulk silicon temperature. These conditions were comparable with the conditions generally reported to result in a substantial increase in the electrical conductivity of hydrogen-ion-bombarded polycrystalline silicon solar cell material. In the current study, we incrementally removed small but measurable amounts of the bombardment-modified material by anodizing the silicon and etching away the anodic layer. The underlying material was then characterized using ellipsometry. A self-consistent solution for the complex refractive index as a function of depth was determined from the ellipsometry data. The results of this study indicate that the real and imaginary parts of the refractive index of the ion-bombarded surface region approached that of the unbombarded substrate at a depth of 50 nm. The refractive index of the first 10 nm, approximately, of ion-bombarded material was strongly independent on the bombardment conditions. Variations in the imaginary part of the refractive index indicate that approximately 10% of incident radiation was absorbed by the first 50 nm of modified material. Reflectance measurements over the wavelength region 300 nm to 1200 nm were consistent with this observation." @default.
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- W2057476918 date "1986-10-01" @default.
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- W2057476918 title "Profile of the complex index of refraction in the surface region of hydrogen-ion-bombarded silicon" @default.
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- W2057476918 doi "https://doi.org/10.1016/0040-6090(86)90381-0" @default.
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