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- W2057478997 abstract "Low-frequency (LF) noise (1 Hz–100 KHz) measurements have been performed on 12 n-channel MOSFETs with 5 μm width and 0.23–10 μm varying lengths. The MOSFETs were fabricated using a 0.18 μm, medium-doped-drain (MDD) technology. Interface state density and oxide trap density were extracted from the sub-threshold slope characteristics of I–VGS measurements, and from 1/f noise measurements, respectively. The McWhorter theory based on long-channel MOSFETs was found to break down for MOSFETs with L<0.6 μm. The drain voltage power spectral density varied inversely with channel length, SVd∝L−1for L≥1 μm as expected from the McWhorter theory, but showed a stronger dependence on channel length for smaller devices. Following the Tsai and Ma formulation, a modified McWhorter model has been used, based on threshold voltage variations across the channel. The new model more accurately predicts the Si–SiO2 interface trap density and the channel length dependence of 1/f noise magnitude in sub-micron MDD MOSFETs. Three HSPICE 1/f noise models were evaluated. Although the highest level model provided a good fit to the data for L≥1 μm, for shorter channel devices all three levels underestimate the noise magnitude." @default.
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- W2057478997 date "1999-09-01" @default.
- W2057478997 modified "2023-10-14" @default.
- W2057478997 title "Channel length scaling of 1/f noise in 0.18 μm technology MDD n-MOSFETs" @default.
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- W2057478997 doi "https://doi.org/10.1016/s0038-1101(99)00141-0" @default.
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