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• W2057681776 abstract "Electrochemical atomic force microscopic (ECAFM) measurement showed that electrochemical dissolution of a p-GaAs(100) electrode in H2SO4 solution was accelerated by the scanning of an AFM tip. When the AFM tip was scanned on the GaAs surface repeatedly, square hollows or wedges with critical dimensions ranging from 100 nm to several μm were fabricated. The depths of the modified structures were dependent not on the scan rate but on the number of scans as well as the electrode potential. The ECAFM study also showed that the electrodeposition of Cu on p-GaAs electrode surface selectively occurred at the modified sites." @default.
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• W2057681776 date "1996-06-01" @default.
• W2057681776 modified "2023-09-23" @default.
• W2057681776 title "AFM tip induced selective electrochemical etching of and metal deposition on p-GaAs(100) surface" @default.
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• W2057681776 doi "https://doi.org/10.1016/0039-6028(96)00224-5" @default.
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