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- W2057868354 abstract "Polycrystalline silicon Him is already an established microelectronic material. PolySi-Ge film is emerging as a new material for advanced CMOS technology and low temperature TFT fabrication for large area display electronics. The deposition and characterisation of polycrystalline silicon and silicongermanium films by various techniques have been reviewed. A comparison of crystalline versus polycrystalline conduction mechanism and the development of conduction models in a chronological order have been discussed. Low temperature deposition of polySi and polySi-Ge films by ion beam sputtering undertaken by the authors are presented with a greater emphasis. Some important results of characterisation of ion beam sputtered films are reported." @default.
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- W2057868354 date "1997-03-01" @default.
- W2057868354 modified "2023-10-18" @default.
- W2057868354 title "Polycrystalline Silicon and Silicon-Germanium Films for Advanced Microelectronics" @default.
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- W2057868354 doi "https://doi.org/10.1080/03772063.1997.11415978" @default.
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