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- W2057915426 abstract "Aluminumn-type silicon Schottky barrier diodes with near-ideal characteristics have recently been developed. In this paper the characteristics of such a Schottky barrier are discussed. The IȁV characteristics agree well with the theoretical thermionic emission model. The barrier height is determined from the saturation current, temperature dependence of forward current, and photoemission to be0.69±0.01eV. The switching measurements show no minority carrier storage, as expected. The low-frequency noise is very low and is comparable to the bestp-n junction and guard-ring Schottky barrier. These desirable features, coupled with the simple process of the Al-nSi Schottky barrier, make them attractive in a variety of applications. Des diodesaàbarrieàre Schottky en silicium de typenaàaluminium ayant des caracte´ristiques quasi-parfaites onte´te´re´cemment de´veloppe´es. Dans cet article on discute des caracte´ristiques d'une telle barrieàre Schottky. Les caracte´ristiques CȁT sont en bon accord avec le modeàle the´orique d'e´mission thermionique. La hauteur de barrieàre est de´termine´e par le courant de saturation, la de´pendance de temperature du courant direct et la photoe´mission est de0,69±0,01eV. Les mesures de commutation ne de´montrent aucun emmagasinage de porteurs minoritaires comme pre´vu. Le bruitaàbasse fre´quence est treàs bas et est comparableaàla meilleure jonctionp-n et barrieàre Schottkyaàanneau de garde. Ces traits de´sirables associe´s au simple proce´de´de la barrieàre Schottky Al-nSi les rendent inte´ressants dans une varie´te´d'applications. Silizium-Dioden mit Aluminium-Schottky-Barriere und nahezu idealer Charakteristick wurden ku¨rzlich entwickelt. In der vorliegenden Arbeit werden diese Charakteristiken diskutiert. Die IȁV-Kennlinie stimmt gut einem thermischen Emissionsmodellu¨berein. Die Ho¨he der Barriere wird aus dem Sa¨ttigungsstrom, der Temperaturabha¨ngigkeit, des Flusstromes und der Photoemission zu0,69±0,01ev bestimmt. Schaltmessungen zeigen wie erwartet keine Speicherung von Minorita¨tstra¨gern. Das Rauschen bei niedrigen Frequenzen ist sehr gering und vergleichbar mit den bestenpn-U¨berga¨ngen und Schottky-Dioden mit Schutzring. Die gu¨nstigen Eigenschaften, gekoppelt mit dem einfachen Herstellungsprozess einer Al-n-Typ-Silizium-Schottky-Diode, machen diese Dioden fu¨r eine grosse Anzahl von Anwendungen sehr interessant." @default.
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- W2057915426 title "Characteristics of aluminum-silicon schottky barrier diode" @default.
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- W2057915426 doi "https://doi.org/10.1016/0038-1101(70)90039-0" @default.
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