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• W2057916183 abstract "A p-n junction is formed for the first time in a cross-sectional area of a GaAs wire crystal with a diameter of about 100 nm. Ultrafine cylindrical growth by metalorganic vapor phase epitaxy is employed for the fabrication. Current-voltage and capacitance-voltage characteristics confirm the formation of the p-n junction in a narrow area at the midpoint of a wire crystal. Intensive light emission by current injection is observed at 77 K and even at room temperature. These results suggest that ultrafine optoelectronic devices with quantum-size p-n junction are possible." @default.
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• W2057916183 date "1992-02-10" @default.
• W2057916183 modified "2023-10-01" @default.
• W2057916183 title "GaAs<i>p</i>‐<i>n</i>junction formed in quantum wire crystals" @default.
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• W2057916183 doi "https://doi.org/10.1063/1.106556" @default.
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