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• W2057956290 abstract "Tungsten films are deposited by metal-organic chemical vapour deposition in a vertical hot-wall thermobalance reactor and a cold-wall stagnant flow reactor from Cp2WH2 (Cp ≡ cyclopentadienyl) and CpW(CO)3CH3. Vapour pressure measurements show low volatilities: 13 mTorr for Cp2WH2 and 89 mTorr for CpW(CO)3CH3 at 75°C. Measurements of growth rate vs. reciprocal substrate temperatures reveal a kinetically limited deposition up to relatively high temperatures (400–500°C), with low growth rates. At 400°C, growth rates are approximately 5 nm h−1 with Cp2WH2 and approximately 0.16 μm h−1 using CpW(CO)3CH3. The tungsten layers contain 5–15at.% C and 5–10at.% O." @default.
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• W2057956290 date "1993-02-01" @default.
• W2057956290 modified "2023-09-26" @default.
• W2057956290 title "Tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors" @default.
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• W2057956290 doi "https://doi.org/10.1016/0921-5107(93)90090-a" @default.
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