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- W2057968428 abstract "Abstract Epitaxial ZnO nanowires were grown on a - and c -plane sapphire substrates by metalorganic chemical vapor deposition without metal catalysts or templates. Nanowires with monodisperse diameters grow in dense arrays perpendicular to a -plane sapphire and with in-plane rotational alignment due to [0 0 0 1] ZnO ∥[ 1 1 2 ¯ 0 ] sapphire , [ 1 1 2 ¯ 0 ] ZnO [ 0 0 0 1 ] sapphire epitaxy. On c -plane sapphire, multiple possible epitaxial relations give a mixture of nanowire orientations. The majority of the nanowires grow in one of the three directions all at an angle of 51.8° off the substrate plane with [0 0 0 1] ZnO ∥[ 1 0 1 ¯ 4 ] sapphire , [ 1 0 1 ¯ 0 ] ZnO ∥[ 1 2 ¯ 1 0 ] sapphire epitaxy. A small fraction of the nanowires grow perpendicular to the substrate with [0 0 0 1] ZnO ∥[0 0 0 1] sapphire ." @default.
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- W2057968428 date "2005-02-01" @default.
- W2057968428 modified "2023-10-05" @default.
- W2057968428 title "Epitaxial growth of ZnO nanowires on a- and c-plane sapphire" @default.
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- W2057968428 doi "https://doi.org/10.1016/j.jcrysgro.2004.10.014" @default.
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